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| MMBTA13 MMBTA14 NPN Transistors Darlington Amplifier COLLECTOR 3 BASE 1 EMITTER 2 MA XIMUM R AT ING S R ating C ollector- E mitter Voltage C ollector- B as e Voltage E mitter- B as e Voltage C ollector C urrent - C ontinuous S ymbol VC E S VC BO VE BO IC Value 30 30 10 300 Unit V dc V dc V dc mAdc 1 2 3 T HE R MA L C HA R A C T E R IS T IC S C harac teris tic Total Device Dis s ipation F R 5 B oard(1) T A = 25 C Derate above 25 C T hermal R es is tance J unction to Ambient Total Device Dis s ipation Alumina S ubs trate, (2) T A = 25 C Derate above 25 C T hermal R es is tance J unction to Ambient J unction and S torage Temperature S ymbol PD Max 225 1.8 R JA PD 556 300 2.4 R qJ A T J , Ts tg 417 - 55 to +150 Unit mW mW/ C C /W mW mW/ C C /W C S OT -23 DE V IC E MA R K ING MMB TA13 = 1M; MMB T A14LT 1 = 1N E L E C T R IC A L C HA R A C T E R IS T IC S (T A = 25 C unles s otherwis e noted) C harac teris tic S ymbol Min Max Unit OF F C HA R A C T E R IS T IC S C ollector- E mitter B reakdown Voltage (I C = 100 uAdc, V B E = 0) C ollector C utoff C urrent (V C B = 30 V dc, I E = 0) E mitter C utoff C urrent (V E B = 10 V dc, I C = 0) 1. F R - 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. _ __ _ _ _ _ _ V (B R )C E S IC B O IE B O 30 - 100 100 V dc nAdc nAdc WEITRON http://www.weitron.com.tw MMBTA13 MMBTA14 E L E C T R IC A L C HA R A C T E R IS T IC S (T A = 25 C unles s otherwis e noted) (C ontinued) C harac teris tic S ymbol Min Max Unit ON C HA R A C T E R IS T IC S (3) DC C urrent G ain (I C = 10 mAdc, V C E = 5.0 V dc) (I C = 100 mAdc, V C E = 5.0 V dc) C ollector- E mitter S aturation Voltage (I C = 100 mAdc, I B = 0.1 mAdc) B as e- E mitter On Voltage (I C = 100 mAdc, V C E = 5.0 V dc) MMB TA13 MMB TA14 MMB TA13 MMB TA14 V C E (s at) VBE hF E 5000 10,000 10,000 20,000 1.5 2.0 V dc V dc S MA L L - S IG NA L C HA R A C T E R IS T IC S C urrent- G ain - B andwidth P roduct (4) (I C = 10 mAdc, V C E = 5.0 V dc, f = 100 MHz) 3. P uls e Tes t: P uls e Width 4. fT = |hfe | ftes t. 300 us , Duty C ycle 2.0%. fT 125 MHz RS in en IDEAL TRANSISTOR F IG .1. T rans is tor Nois e Model 500 200 100 BANDWIDTH = 1.0 Hz RS @ 0 in, NOISE CURRENT (pA) 2.0 BANDWIDTH = 1.0 Hz 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 10 20 100 m A 10 m A en, NOISE VOLTAGE (nV) IC = 1.0 mA 10mA 50 100mA 20 IC = 1.0 m A 10 5.0 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k f, FREQUENCY (Hz) 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k f, FREQUENCY (H z) F IG .2 Nois e Voltage F IG .3 Nois e C urrent WEITRON http://www.weitron.com.tw MMBTA13 MMBTA14 VT, TOTAL WIDEBAND NOISE VOLTAGE (nV) 200 BANDWIDTH = 10 Hz TO 15.7 kHz NF, NOISE FIGURE (dB) IC = 10 m A 10 10 m A 8.0 6.0 4.0 2.0 5.0 10 20 50 100 200 R S , SOURCE RESISTANCE (kW) 500 1000 0 1.0 2.0 5.0 10 20 50 100 200 R S , SOURCE RESISTANCE (kW) 500 1000 IC = 1.0 mA 100 m A 14 BANDWIDTH = 10 Hz TO 15.7 kHz 12 100 70 50 30 20 1.0 mA 10 1.0 100 mA 2.0 F IG .4 Total Wideband Nois e Voltage 20 TJ = 25 C |hfe |, SMALL- SIGNAL CURRENT GAIN 4.0 F IG .5 W ideband Nois e F igure C, CAPACITANCE (pF) 10 7.0 5.0 2.0 VCE = 5.0 V f = 100 MHz TJ = 25 C Cibo Cobo 1.0 0.8 0.6 0.4 3.0 2.0 0.04 0.1 0.2 0.4 1.0 2.0 4.0 10 VR , REVERSE VOLTAGE (VOLTS) 20 40 0.2 0.5 1.0 2.0 0.5 10 20 50 100 200 IC, COLLECTOR CURRENT (m A) 500 F IG .6 C apac itanc e F IG .7 High F requenc y C urrent G ain 200 k TJ = 125 C hFE , DC CURRENT GAIN 100 k 70 k 50 k 30 k 20 k 10 k 7.0 k 5.0 k 3.0 k 2.0 k 5.0 7.0 10 VCE , COLLECTOR- EMITTER VOLTAGE (VOLTS) 3.0 TJ = 25 C 2.5 IC = 10 mA 50 mA 250 mA 500 mA 25 C 2.0 1.5 - 55 C VCE = 5.0 V 1.0 0.5 0.1 0.2 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 0.5 1.0 2.0 5.0 10 20 50 100 200 IB, BASE CURRENT (m A) 500 1000 F IG .8 DC C urrent G ain F IG .9 C ollec tor S aturation R egion WEITRON http://www.weitron.com.tw MMBTA13 MMBTA14 R qV, TEMPERATURE COEFFICIENTS (mV/ C) 1.6 TJ = 25 C 1.4 V, VOLTAGE (VOLTS) VBE(sat) @ I C/IB = 1000 1.2 VBE(on) @ V CE = 5.0 V 1.0 - 1.0 - 2.0 - 3.0 25 C TO 125 C - 4.0 VB FOR V BE - 5.0 - 6.0 5.0 7.0 10 - 55 C TO 25 C *APPLIES FOR IC/IB 3 hFE /3.0 *Rq VC FOR V CE(sat) - 55 C TO 25 C 25 C TO 125 C 0.8 VCE(sat) @ I C/IB = 1000 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 0.6 5.0 7.0 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 F IG .10. " On" Voltages 1.0 0.7 0.5 0.3 0.2 0.1 0.1 0.07 0.05 0.03 0.02 0.01 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 t, TIME (ms) 0.05 SINGLE PULSE F IG .11 Temperature C oeffic ients r(t), TRANSIENTTHERMAL RESIST ANCE (NORMALIZED) D = 0.5 0.2 SINGLE PULSE ZqJC(t) = r(t)wR qJC T J(pk) - T C = P(pk)ZqJC(t) ZqJA(t) = r(t)wR qJA T J(pk) - T A = P(pk)ZqJA(t) 100 200 500 1.0 k 2.0 k 5.0 k 10 k F IG .12 T hermal R es pons e IC, COLLECTOR CURRENT (mA) 1.0 k 700 500 300 200 100 70 50 30 20 10 0.4 0.6 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT TA = 25 C TC = 25 C 1.0 ms 100 m s FIGURE A tP PP PP 1.0 s t1 1/f 40 t1 tP PEAK PULSE POWER = PP DUTY CYCLE t1 f 1.0 2.0 4.0 6.0 10 20 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) F IG .13 A c tive R egion S afe Operating A rea Des ign Note: Us e of Trans ient T hermal R es is tanc e Data WEITRON http://www.weitron.com.tw MMBTA13 MMBTA14 SOT-23 Package Outline Dimensions Unit:mm A TOP VIEW B C E G H D K L Dim Min Max A 0.35 0.51 B 1.19 1.80 C 2.10 3.00 D 0.85 1.05 E 0.46 1.00 G 1.70 2.10 H 2.70 3.10 J 0.01 0.13 K 0.89 1.60 L 0.30 0.61 M 0.076 0.25 M J WEITRON http://www.weitron.com.tw |
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